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Ordering number : ENA1135
LV8086T
Overview
Bi-CMOS LSI
Forward/Reverse Motor Driver
LV8086T is a 2ch forward/reverse motor driver IC using D-MOS FET for output stage. As MOS circuit is used, it supports the PWM input. Its features are that the on resistance (0.75 typ) and current dissipation are low. It also provides protection functions such as heat protection circuit and reduced voltage detection and is optimal for the motors that need high-current.
Functions
* 2ch forward/reverse motor driver * Possible to respond to 3V control voltage and 6V motor voltage device * Low power consumption * Low-temperature resistance 1.2 * Built-in charge pump circuit * Built-in low voltage reset and thermal shutdown circuit * Four mode function forward/reverse, brake, stop. * Compact TSSOP24 package
Specifications
Absolute Maximum Ratings at Ta = 25C, SGND = PGND = 0V
Parameter Supply voltage (For load) Supply voltage (For control) Output current Output peak current Input voltage Allowable power dissipation Operating temperature Storage temperature Symbol VM1,2 max VCC max IO max1 IO max2 VIN max Pd Topr Tstg * Mounted on a board t 100ms t 10ms Conditions Ratings -0.5 to 7.5 -0.5 to 6.0 1.4 2.5 -0.5 to VCC+0.5 800 -20 to +75 -55 to +150 Unit V V A A V mW C C
* : Mounted on a specified board : 30x50x1.6mm, glass epoxy board.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
31908 TI IM 20060522-S00001 No. A1135-1/6
LV8086T
Allowable Operating Ratings at Ta = 25C, SGND = PGND = 0V
Parameter Supply voltage (VM Pin) Supply voltage (VCC Pin) Input signal voltage Input signal frequenc Capacitor for charge pump Symbol VM VCC VIN f max C1, C2, C3 Conditions Ratings 2.0 to 7.0 2.7 to 5.5 0 to VCC 100 0.001 to 0.1 Unit V V V kHz F
Electrical Characteristics at Ta = 25C, VCC = VM1 = VM2 = 5.0V, SGND = PGND = 0V, unless especially specified.
Parameter Supply current for load at standby Supply current for control at standby Current drain during operation H-level input voltage L-level input voltage H-level input current (IN1, IN2, IN3, IN4) L-level input current (IN1, IN2, IN3, IN4) Pull-down resistance (EN1, 2) RUP 100 200 400 k IIL -1.0 A IC1 VIH VIL IIH EN = 5V, VG at no load 2.7V VCC 5.5V 2.7V VCC 5.5V 0.6VCC 0 0.7 1.2 VCC 0.2VCC 1.0 mA V V A Symbol IMO ICO EN = 0V EN = 0V, IN1 = IN2 = IN3 = IN4 = 0V Conditions min Ratings typ max 1.0 1.0 A A Unit
Ta = 25C, VCC = VM = 5.0V, SGND = PGND = 0V
Parameter Output ON resistance Charge pump voltage Low-voltage detection operation voltage Thermal shutdown operation temperature Charge pump capacity (IG = 500A) IG current dissipation (Fin = 20kHz) Charge pump start time Output block Turn on time Turn off time IG TVG TPLH TPHL CVG = 0.1F 0.2 0.2 350 1.0 0.4 0.4 A ms s s VGLOAD 8 9 V Tth 180 C Symbol RON VG VCS Conditions min Sum of ON resistances at top and bottom 8.5 2.15 2.30 Ratings typ 0.75 max 1.2 10.5 2.45 V V Unit
Remarks 1. It shows current dissipation of VM1,2 pin in output OFF state. 2. It shows current dissipation of VCC pin in stand-by state. (The standard current depends on EN pin pull-down resistance.) 3. It shows current dissipation of VCC pin in state of EN = 5V (stand-by), including current dissipation of VG pin. 4. For IN1, IN2, IN3 and IN4 pins, no pull-down and pull-up resistance is needed. (High impedance pin) 5. It shows sum of upper and lower saturation voltages of OUT pin. 6. It controls charge-pump oscillation and makes specified voltage. 7. When low voltage is detected, the lower output is turned OFF. 8. When thermal protection circuit is activated, the lower output is turned OFF. When the heat temperature is fallen, it is turned ON again. 9. IG (VG pin load current) = 500A 10. It shows VG pin current dissipation in state of PWM input for IN pin. 11. It specifies start-up time from 10% to 90% when VG is in non-load state (when setting the capacitor between VG and GND to 0.1F and VCC is 5V). 12. It specifies 10% to 90% for start-up and 90% to 10% for shut-down.
No. A1135-2/6
LV8086T
Package Dimensions
unit : mm (typ) 3260A
1000
Pd max - Ta
Specified Board: 30x50x1.6mm3 glass epoxy board.
6.5 24 13
Allowable power dissipation, Pd max - mW
800
4.4
6.4
600 480 400
1 0.5 (0.5) 0.22
12
0.15
1.2max
0.5
(1.0)
200
0.08
0 -20
0
20
40
60
75 80
100
SANYO : TSSOP24(225mil)
Ambient temperature, Ta - C
Pin Assignment
EN1 1 VM2 2 NC 3 PGND 4 OUT4 5 24 EN2 23 IN1 22 IN2 21 IN3 20 IN4
LV8086T
OUT3 6 OUT2 7 OUT1 8 PGND 9 NC 10 VM1 11 VG 12
19 EXTRA 18 SGND 17 C2L 16 C2H 15 C1L 14 C1H 13 VCC
No. A1135-3/6
LV8086T
Block Diagram
C2H OSC, CHARGE_PUMP C2L C1H C1L VCC EN1 EN2
CMOS LOGIC LEVEL SHIFT
VG
Low-voltage thermal protection
H BRIDGE1
VM1
OUT1 OUT2
P-GND VM2
IN1 IN2 IN3 IN4 EXTRA SGND OUT3 OUT4
H BRIDGE2
P-GND
Truth table
EXTRA EN1 (EN2) IN1 (IN3) H H H L L L L H H L H L IN2 (IN4) H L H L L H L L OUT1 (OUT3) L H L OUT2 (OUT4) L L H Z L L H L ON OFF ON Circuit of Charge Pump Mode Brake Forward Reverse Standby Standby Forward Reverse Brake - : Don't care Z : High-Impedance * Current drain becomes zero in the standby mode. * The output side becomes OFF, with motor drive stopped, during voltage reduction and thermal protection.
No. A1135-4/6
LV8086T
Pin Functions
Pin No. 15 17 Pin name C1L C2L Function Voltage raising capacitor connection pin Equivalent Circuit
VCC
14 16
C1H C2H
Voltage raising capacitor connection pin
VG C1H C2H
23 22 21 20 19
IN1 IN2 IN3 IN4 EXTRA
Driver output changeover
VCC
1 24
EN1 EN2
Logic enable pin TOUT output control pin (Pull-down resistor incorporated)
VCC
200k
8 7 6 5
OUT1 OUT2 OUT3 OUT4 PGND
Driver output pin
VM
OUT
OUT
PGND
2 11 13 12 VM2 VM1 VCC VG Logic power supply Driver drive circuit power supply Motor power supply
VG 0.1F
C2H 0.01F C2L
18
SGND
Logic GND
9 4
PGND PGND
Driver GND (both terminals to be connected)
No. A1135-5/6
LV8086T
Sample Application Circuit
8.5 to 10.5V 0.1F 1.0 to 6.5V
C2H
0.01F 2.7 to 5.5V
VG
C2L VM1 C1H
0.01F *1
C1L VCC EN1 EN2 CPU EN3 EN4 SGND
OUT1 OUT2 PGND
OUT3 OUT4 PGND VM2
*1
EXTRA
*1: Connect a kickback absorption capacitor directly near IC. Coil kickback may cause rise of the voltage of VM line, and the voltage exceeding the maximum rating may be applied momentarily, resulting in deterioration or damage of IC.
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This catalog provides information as of March, 2008. Specifications and information herein are subject to change without notice.
PS No.A1135-6/6

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